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2N7002E
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
75
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
1
m A
V DS = 60 V
T J = 125 ° C
500
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
4.4
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 240 mA
0.86
2.5
W
V GS = 4.5 V, I D = 50 mA
1.1
3.0
Forward Transconductance
g FS
V DS = 5 V, I D = 200 mA
530
mS
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
V GS = 0 V, f = 1 MHz,
V DS = 25 V
V GS = 5 V, V DS = 10 V;
I D = 240 mA
26.7
4.6
2.9
0.81
0.31
0.48
40
pF
nC
Gate ? to ? Drain Charge
Q GD
0.08
SWITCHING CHARACTERISTICS, V GS = V (Note 3)
Turn ? On Delay Time
t d(ON)
1.7
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DD = 30 V,
I D = 200 mA, R G = 10 W
1.2
4.8
3.6
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
0.79
1.2
V
I S = 200 mA
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
2
T J = 85 ° C
0.7
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